Product Details | TRANSISTOR

5961-00-476-4625 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Part Alternates: 5961-00-476-4625, 00-476-4625, 5961004764625, 004764625

Electrical and Electronic Equipment Components | Semiconductor Devices and Associated Hardware

Supply Group (FSG) NSN Assign. NIIN
59 00-476-4625

Cross Reference | NSN 5961-00-476-4625

Part Number Cage Code Manufacturer
1855-0378 1LQK8 KEYSIGHT TECHNOLOGIES, INC.
1855-0378 28480 HEWLETT-PACKARD COMPANY DBA HEWLETT-PACKARD CO. OR HP
200734-007 81413 BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
2654518 10001 NAVAIR AND NAVSEA MANAGED ORIGINAL DESIGN ACTIVITY DWG NOT
2N4091 15818 TELCOM SEMICONDUCTOR INC
2N4091 17856 SILICONIX INCORPORATED DIV SILICONIX
2N4091 21845 SOLITRON DEVICES, INC.
2N4856 81350 JOINT ARMY-NAVY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS
418892-7 96214 RAYTHEON COMPANY DBA RAYTHEON
560717 56232 LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN
6854W19P002 97424 AMETEK, INC. DIV AEROSPACE & DEFENSE
723096-10 05869 RAYTHEON COMPANY DBA RAYTHEON
EHH1060 16236 DLA LAND AND MARITIME
FN2863 17856 SILICONIX INCORPORATED DIV SILICONIX
JAN2N4091 81349 MILITARY SPECIFICATIONS PROMULGATED BY MILITARY
JAN2N4856 81349 MILITARY SPECIFICATIONS PROMULGATED BY MILITARY
JANTX2N4856 81349 MILITARY SPECIFICATIONS PROMULGATED BY MILITARY
JANTX2N4856 81350 JOINT ARMY-NAVY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS
JANTX2N4856 C7191 ADELCO ELEKTRONIK GMBH
JANTX2N4856A C7191 ADELCO ELEKTRONIK GMBH
MIL-PRF-19500/385 81349 MILITARY SPECIFICATIONS PROMULGATED BY MILITARY
SF12452 27014 NATIONAL SEMICONDUCTOR CORPORATION
SFE1020-530 04713 FREESCALE SEMICONDUCTOR, INC.
SN2418 17856 SILICONIX INCORPORATED DIV SILICONIX

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Technical Data | NSN 5961-00-476-4625

Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
INTERNAL CONFIGURATION FIELD EFFECT
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE N-CHANNEL JUNCTION TYPE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 40.0 MAXIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 40.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE
CURRENT RATING PER CHARACTERISTIC 10.00 MILLIAMPERES MAXIMUM GATE CURRENT
POWER RATING PER CHARACTERISTIC 360.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT 175.0 DEG CELSIUS AMBIENT AIR
INCLOSURE MATERIAL METAL
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE GATE
MOUNTING METHOD TERMINAL
TERMINAL LENGTH 0.500 INCHES MINIMUM
TERMINAL CIRCLE DIAMETER 0.100 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY 3 UNINSULATED WIRE LEAD
OVERALL LENGTH 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
OVERALL DIAMETER 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
FEATURES PROVIDED HERMETICALLY SEALED CASE

Restrictions/Controls & Freight Information | NSN 5961-00-476-4625

Category Code Description
Hazardous Material Indicator CodeNThere is no data in the HMIS and the NSN is in an FSC not generally suspected of containing hazardous materials
Electro-static Discharge Susceptible:BESD sensitivity
Category Code Description
No Freight Information