Product Details | TRANSISTOR

5961-00-501-1100 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Part Alternates: 5961-00-501-1100, 00-501-1100, 5961005011100, 005011100

Electrical and Electronic Equipment Components | Semiconductor Devices and Associated Hardware

Supply Group (FSG) NSN Assign. NIIN
59 00-501-1100

Cross Reference | NSN 5961-00-501-1100

Part Number Cage Code Manufacturer
0N205436 98230 NATIONAL SECURITY AGENCY
1855-0392 28480 HEWLETT-PACKARD COMPANY DBA HEWLETT-PACKARD CO. OR HP
20-00707-001 00724 RAYTHEON COMPANY DBA RAYTHEON
2682578 53711 NAVAL SEA SYSTEMS COMMAND
2N4416 04713 FREESCALE SEMICONDUCTOR, INC.
2N4416 17856 SILICONIX INCORPORATED DIV SILICONIX
2N4416 21845 SOLITRON DEVICES, INC.
2N4416A 01295 TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS
2N4416A 17856 SILICONIX INCORPORATED DIV SILICONIX
2N4416A-2 17856 SILICONIX INCORPORATED DIV SILICONIX
352-0756-012 13499 ROCKWELL COLLINS, INC. DBA GOVERNMENT SYSTEMS
352-8011-240 13499 ROCKWELL COLLINS, INC. DBA GOVERNMENT SYSTEMS
352-8011-240 95105 ROCKWELL COLLINS, INC. DIV GOVERNMENT SYSTEMS - DALLAS
419R559H01 97942 NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN SYSTEMS
4810-0000-001 51190 AEROFLEX WICHITA, INC. DBA IFR SYSTEMS
928209-2B 82577 RAYTHEON COMPANY DBA RAYTHEON
A500-58 12775 C-COR ELECTRONICS INC
JAN2N4416 81349 MILITARY SPECIFICATIONS PROMULGATED BY MILITARY
JANTX2N4416 81349 MILITARY SPECIFICATIONS PROMULGATED BY MILITARY
JANTX2N4416A 81349 MILITARY SPECIFICATIONS PROMULGATED BY MILITARY
MIL-PRF-19500/428 81349 MILITARY SPECIFICATIONS PROMULGATED BY MILITARY
MIL-S-19500/428 81349 MILITARY SPECIFICATIONS PROMULGATED BY MILITARY
SFE1300H3 04713 FREESCALE SEMICONDUCTOR, INC.

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Technical Data | NSN 5961-00-501-1100

Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
INTERNAL CONFIGURATION FIELD EFFECT
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE N-CHANNEL JUNCTION TYPE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 30.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 30.0 MAXIMUM GATE TO SOURCE VOLTAGE
CURRENT RATING PER CHARACTERISTIC 10.00 MILLIAMPERES MAXIMUM GATE CURRENT
POWER RATING PER CHARACTERISTIC 175.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT 200.0 DEG CELSIUS JUNCTION
INCLOSURE MATERIAL GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION TO-72
MOUNTING METHOD TERMINAL
TERMINAL LENGTH 0.500 INCHES MINIMUM
TERMINAL CIRCLE DIAMETER 0.100 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY 4 UNINSULATED WIRE LEAD
OVERALL LENGTH 0.190 INCHES NOMINAL
OVERALL DIAMETER 0.219 INCHES NOMINAL
FEATURES PROVIDED HERMETICALLY SEALED CASE

Restrictions/Controls & Freight Information | NSN 5961-00-501-1100

Category Code Description
Hazardous Material Indicator CodeNThere is no data in the HMIS and the NSN is in an FSC not generally suspected of containing hazardous materials
Category Code Description
No Freight Information