Product Details | TRANSISTOR

5961-00-812-1690 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Part Alternates: ST4059, J357, 17793252, 1779325-2, 5961-00-812-1690, 00-812-1690, 5961008121690, 008121690

Electrical and Electronic Equipment Components | Semiconductor Devices and Associated Hardware

Supply Group (FSG) NSN Assign. NIIN
59 00-812-1690

Cross Reference | NSN 5961-00-812-1690

Part Number Cage Code Manufacturer
1261915-8 19315 HONEYWELL INTL INC DEFENSE AVIONICS SYSTEMS FORMER BENDIX NAVIGATION AND
13-122143-1 04655 GENERAL DYNAMICS C4 SYSTEMS, INC.
1779325-2 56232 LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN
2088262-23 06845 RAYTHEON COMPANY DBA RAYTHEON
2088262-23 27914 HONEYWELL INTERNATIONAL INC DBA HONEYWELL
2N656 07688 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
2N656 81350 JOINT ARMY-NAVY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS
2N656A 81349 MILITARY SPECIFICATIONS PROMULGATED BY MILITARY
429850 36378 RAYTHEON TECHNICAL SERVICES COMPANY
5L5511-102-25 D1901 AIRBUS DEFENCE AND SPACE GMBH DIV SEPS
700050 52542 SYSTRON-DONNER CORP MICROWAVE/INSTRUMENT DIV
947063-6560 06481 NORTHROP GRUMMAN SYSTEMS CORPORATION
J357 01295 TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS
J357 96214 RAYTHEON COMPANY DBA RAYTHEON
JAN2N656 81349 MILITARY SPECIFICATIONS PROMULGATED BY MILITARY
JAN2N656 81350 JOINT ARMY-NAVY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS
JAN2N656 C7191 ADELCO ELEKTRONIK GMBH
JAN2N656A C7191 ADELCO ELEKTRONIK GMBH
MIL-S-19500/74 81349 MILITARY SPECIFICATIONS PROMULGATED BY MILITARY
ST4059 03877 GILBERT ENGINEERING CO INC/INCON SUB OF TRANSITRON ELECTRONIC CORP

Request a Quote

What Our Customers Say

Compare

NSNs for Compare ( up to 4 ): Add 5961-00-812-1690

Technical Data | NSN 5961-00-812-1690

Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
INTERNAL CONFIGURATION JUNCTION CONTACT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 100.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 100.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC AND 8.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC
POWER RATING PER CHARACTERISTIC 4.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT 200.0 DEG CELSIUS JUNCTION
INCLOSURE MATERIAL METAL
MOUNTING METHOD TERMINAL
TERMINAL LENGTH 1.500 INCHES MINIMUM
TERMINAL CIRCLE DIAMETER 0.200 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY 3 UNINSULATED WIRE LEAD
OVERALL LENGTH 0.255 INCHES MAXIMUM
OVERALL DIAMETER 0.330 INCHES MAXIMUM
FEATURES PROVIDED HERMETICALLY SEALED CASE
SPECIAL FEATURES JUNCTION PATTERN ARRANGEMENT: NPN

Restrictions/Controls & Freight Information | NSN 5961-00-812-1690

Category Code Description
Hazardous Material Indicator CodeNThere is no data in the HMIS and the NSN is in an FSC not generally suspected of containing hazardous materials
Category Code Description
No Freight Information