NSN 5961-01-015-4776 01-015-4776, 010154776
Product Details | TRANSISTOR
5961-01-015-4776 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Part Alternates: 5961-01-015-4776, 01-015-4776, 5961010154776, 010154776
Electrical and Electronic Equipment Components | Semiconductor Devices and Associated Hardware
| Supply Group (FSG) | NSN Assign. | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | 01-015-4776 | 20588 ( TRANSISTOR ) |
Cross Reference | NSN 5961-01-015-4776
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 1855-0029 | 28480 | HEWLETT-PACKARD COMPANY DBA HEWLETT-PACKARD CO. OR HP |
| 2068169-0701 | 27914 | HONEYWELL INTERNATIONAL INC DBA HONEYWELL |
| 28461-41305 | K0662 | SELEX ES LTD |
| 2N2608 | 04713 | FREESCALE SEMICONDUCTOR, INC. |
| 2N2608 | 07688 | JOINT ELECTRON DEVICE ENGINEERING COUNCIL |
| 2N2608 | 17856 | SILICONIX INCORPORATED DIV SILICONIX |
| 2N2608 | D9816 | WIMA SPEZIALVERTRIEB ELEKTRONISCHERBAUELEMENTE GMBH & CO. |
| 2N2608A | 04713 | FREESCALE SEMICONDUCTOR, INC. |
| 352-0605-010 | 13499 | ROCKWELL COLLINS, INC. DBA GOVERNMENT SYSTEMS |
| 352-7500-360 | 13499 | ROCKWELL COLLINS, INC. DBA GOVERNMENT SYSTEMS |
| 352-7500-881 | 13499 | ROCKWELL COLLINS, INC. DBA GOVERNMENT SYSTEMS |
| 4192800-215 | 05869 | RAYTHEON COMPANY DBA RAYTHEON |
| 966102-3 | 94580 | HONEYWELL INTERNATIONAL INC. DBA HONEYWELL |
| JAN2N2608 | 81349 | MILITARY SPECIFICATIONS PROMULGATED BY MILITARY |
| JAN2N2608 | 81350 | JOINT ARMY-NAVY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS |
| JAN2N2608A | C7191 | ADELCO ELEKTRONIK GMBH |
| MIL-S-19500/295 | 81349 | MILITARY SPECIFICATIONS PROMULGATED BY MILITARY |
| MQ2N2608 | 43611 | MICROSEMI CORP. - MASSACHUSETTS DBA MICROSEMI-LAWRENCE |
| TX2N2608 | 81349 | MILITARY SPECIFICATIONS PROMULGATED BY MILITARY |
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Technical Data | NSN 5961-01-015-4776
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | FIELD EFFECT |
| (NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE | P-CHANNEL INSULATED GATE TYPE |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 30.0 MAXIMUM DRAIN TO GATE VOLTAGE |
| POWER RATING PER CHARACTERISTIC | 300.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION |
| INCLOSURE MATERIAL | METAL |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-18 |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| TERMINAL CIRCLE DIAMETER | 0.100 INCHES NOMINAL |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.200 INCHES NOMINAL |
| OVERALL DIAMETER | 0.220 INCHES NOMINAL |
| FEATURES PROVIDED | BURN IN |
| TEST DATA DOCUMENT | 94580-966102 DRAWING |
Restrictions/Controls & Freight Information | NSN 5961-01-015-4776
| Category | Code | Description |
|---|---|---|
| Hazardous Material Indicator Code | N | There is no data in the HMIS and the NSN is in an FSC not generally suspected of containing hazardous materials |
| Electro-static Discharge Susceptible: | B | ESD sensitivity |
| Category | Code | Description |
|---|---|---|
| No Freight Information | ||