NSN 5961-01-027-1717 01-027-1717, 010271717
Product Details | UNITIZED SEMICONDUCTOR DEVICES
5961-01-027-1717 Two or more discrete semiconductor devices such as diode(s) and/or transistor(s), permanently cased, encapsulated, or potted together to form an inseparable unit. Excludes devices having one or more components other than semiconductor devices. The individually distinct devices forming the unit may be internally connected. The unit in itself does not perform a complete specific function and cannot be assigned a more definite item name. It may include or consist of inseparable matched pairs. May or may not include mounting hardware and/or heatsink. For interconnected items arranged in stack(s), see RECTIFIER, SEMICONDUCTOR DEVICE. For items formed on or within a semiconductor material substrate, formed on an insulating substrate or formed on a combination of both of these types, see MICROCIRCUIT (as modified). Excludes NETWORK (as modified); ABSORBER, OVERVOLTAGE; SEMICONDUCTOR DEVICE SET; and SEMICONDUCTOR DEVICE ASSEMBLY. Do not use if more specific name applies.
Part Alternates: 5961-01-027-1717, 01-027-1717, 5961010271717, 010271717
Electrical and Electronic Equipment Components | Semiconductor Devices and Associated Hardware
| Supply Group (FSG) | NSN Assign. | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | 01-027-1717 | 61962 ( SEMICONDUCTOR DEVICES, UNITIZED ) |
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Related Products | NSN 5961-01-027-1717
Technical Data | NSN 5961-01-027-1717
| Characteristic | Specifications |
|---|---|
| COMPONENT NAME AND QUANTITY | 4 TRANSISTOR |
| SEMICONDUCTOR MATERIAL | SILICON ALL TRANSISTOR |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 40.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 50.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC WITH BASE SHORT-CIRCUITED TO EMITTER AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, INSTANTANEOUS AND 50.0 MAXIMUM COLLECTOR-TO-BASE VOLTAGE, INSTANTANEOUS ALL SEMICONDUCTOR |
| CURRENT RATING PER CHARACTERISTIC | 500.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC ALL TRANSISTOR |
| POWER RATING PER CHARACTERISTIC | 2.0 WATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS JUNCTION |
| INCLOSURE MATERIAL | PLASTIC |
| MOUNTING METHOD | PRESS FIT |
| TERMINAL TYPE AND QUANTITY | 14 RIBBON |
| OVERALL LENGTH | 0.760 INCHES MAXIMUM |
| OVERALL HEIGHT | 0.200 INCHES NOMINAL |
| OVERALL WIDTH | 0.260 INCHES MAXIMUM |
| SPECIAL FEATURES | INTERNAL JUNCTION CONFIGURATION TRANSISTOR NPN |
Restrictions/Controls & Freight Information | NSN 5961-01-027-1717
| Category | Code | Description |
|---|---|---|
| Hazardous Material Indicator Code | N | There is no data in the HMIS and the NSN is in an FSC not generally suspected of containing hazardous materials |
| Electro-static Discharge Susceptible: | A | No known Electrostatic Discharge (ESD) or Electromagnetic Interference (EMI) sensitivity |
| Category | Code | Description |
|---|---|---|
| No Freight Information | ||