Product Details | UNITIZED SEMICONDUCTOR DEVICES

5961-01-048-7737 Two or more discrete semiconductor devices such as diode(s) and/or transistor(s), permanently cased, encapsulated, or potted together to form an inseparable unit. Excludes devices having one or more components other than semiconductor devices. The individually distinct devices forming the unit may be internally connected. The unit in itself does not perform a complete specific function and cannot be assigned a more definite item name. It may include or consist of inseparable matched pairs. May or may not include mounting hardware and/or heatsink. For interconnected items arranged in stack(s), see RECTIFIER, SEMICONDUCTOR DEVICE. For items formed on or within a semiconductor material substrate, formed on an insulating substrate or formed on a combination of both of these types, see MICROCIRCUIT (as modified). Excludes NETWORK (as modified); ABSORBER, OVERVOLTAGE; SEMICONDUCTOR DEVICE SET; and SEMICONDUCTOR DEVICE ASSEMBLY. Do not use if more specific name applies.

Part Alternates: MU785, S2270, 60889691, 6088969-1, 5961-01-048-7737, 01-048-7737, 5961010487737, 010487737

Electrical and Electronic Equipment Components | Semiconductor Devices and Associated Hardware

Supply Group (FSG) NSN Assign. NIIN
59 03 OCT 1977 01-048-7737

Cross Reference | NSN 5961-01-048-7737

Part Number Cage Code Manufacturer
6088969-1 03640 LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN
MU785 17856 SILICONIX INCORPORATED DIV SILICONIX
S2270 21845 SOLITRON DEVICES, INC.

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Technical Data | NSN 5961-01-048-7737

Characteristic Specifications
COMPONENT NAME AND QUANTITY 2 TRANSISTOR
SEMICONDUCTOR MATERIAL SILICON ALL TRANSISTOR
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE P-CHANNEL INSULATED GATE TYPE ALL TRANSISTOR
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC -30.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND -30.0 MAXIMUM GATE TO SOURCE VOLTAGE ALL TRANSISTOR
CURRENT RATING PER CHARACTERISTIC -50.00 MILLIAMPERES MAXIMUM DRAIN CURRENT ALL TRANSISTOR
POWER RATING PER CHARACTERISTIC 500.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT 125.0 DEG CELSIUS JUNCTION
INCLOSURE MATERIAL METAL OR PLASTIC
MOUNTING METHOD TERMINAL
TERMINAL TYPE AND QUANTITY 6 RIBBON
OVERALL LENGTH 0.250 INCHES MINIMUM AND 0.275 INCHES MAXIMUM
OVERALL HEIGHT 0.040 INCHES MINIMUM AND 0.050 INCHES MAXIMUM
OVERALL WIDTH 0.155 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
FUNCTION FOR WHICH DESIGNED SWITCHING
FEATURES PROVIDED GOLD PLATED LEADS AND HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL GOLD
III PRECIOUS MATERIAL AND LOCATION TERMINAL SURFACES GOLD

Restrictions/Controls & Freight Information | NSN 5961-01-048-7737

Category Code Description
Shelf-Life Code:0Nondeteriorative
Hazardous Material Indicator CodeNThere is no data in the HMIS and the NSN is in an FSC not generally suspected of containing hazardous materials
Demilitarization Code:ANon-Munitions List Item/ Non-Strategic List Item - Demilitarization not required.
Controlled Inventory Item Code:UUNCLASSIFIED
Electro-static Discharge Susceptible:BESD sensitivity
Precious Metals Indicator Code:GItem contains gold
Criticality Code:X The item does not have a nuclear hardened feature or any other critical feature such as tolerance, fit restriction or application.
Category Code Description
NMF Description 063025 SEMICONDUCTORS/DEVICES NOI ETC
Less than car load rating
Less than truck load rating W Rating Variable
Water commodity Code 72D unknown
Originating Activity Code TX Defense Supply Center Columbus
Columbus, OH 43218
Air Dimension Code A Shipment is not a consolidation and does not exceed 72 inches in any dimension.
Air Commodity H Signal Corps supplies and equipment, including radio equipment and supplies, communications equipment and supplies, electrical equipment and supplies, etc.
Air Special Handling Z No special handling required.
Special Handling Code 9 unknonwn
HAZMAT
Type of Cargo 3 Electrostatic Sensitive Device (ESD), subject to damage caused by electrostatic discharge. (See DoD 4500.32-R, Volume 1, Appendix A, Section I for additional information on ESD devices).