NSN 5961-01-112-0925 ITS4029, VA1093, 9289232B
Product Details | TRANSISTOR
5961-01-112-0925 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Part Alternates: ITS4029, VA1093, 9289232B, 928923-2B, 5961-01-112-0925, 01-112-0925, 5961011120925, 011120925
Electrical and Electronic Equipment Components | Semiconductor Devices and Associated Hardware
| Supply Group (FSG) | NSN Assign. | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | 01-112-0925 | 20588 ( TRANSISTOR ) |
Demand History | NSN 5961-01-112-0925
| Part Number | Request Date | QTY | Origin |
|---|---|---|---|
| 5961-01-112-0925 | 2010-08-221 | 1 | DIBBS |
Cross Reference | NSN 5961-01-112-0925
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 167568 | 21877 | NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NAVAL AND MARINE SYSTEMS |
| 207079P1 | 94117 | BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION INC. |
| 2139943G001 | 28527 | EXELIS INC. DBA ELECTRONIC SYSTEMS, INTEGRATED |
| 2N6660 | 17856 | SILICONIX INCORPORATED DIV SILICONIX |
| 2N6660-750 | 17856 | SILICONIX INCORPORATED DIV SILICONIX |
| A3167897-2 | 80063 | US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS |
| C10666-1 | 81755 | LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN AERONAUTICS |
| FS341-1001-003H | K3902 | BAE SYSTEMS MARITIME SERVICES |
| JAN2N6660 | 81349 | MILITARY SPECIFICATIONS PROMULGATED BY MILITARY |
| JANTX2N6660 | 81349 | MILITARY SPECIFICATIONS PROMULGATED BY MILITARY |
| MIL-PRF-19500/547 | 81349 | MILITARY SPECIFICATIONS PROMULGATED BY MILITARY |
| MIL-S-19500/547 | 81349 | MILITARY SPECIFICATIONS PROMULGATED BY MILITARY |
| VA1050 | 17856 | SILICONIX INCORPORATED DIV SILICONIX |
| VN66AK | 17856 | SILICONIX INCORPORATED DIV SILICONIX |
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Technical Data | NSN 5961-01-112-0925
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | FIELD EFFECT |
| (NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE | N-CHANNEL INSULATED GATE TYPE |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 60.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND -30.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE |
| CURRENT RATING PER CHARACTERISTIC | 3.00 AMPERES MAXIMUM DRAIN CURRENT |
| POWER RATING PER CHARACTERISTIC | 6.25 WATTS MAXIMUM TOTAL DEVICE DISSIPATION |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS AMBIENT AIR |
| INCLOSURE MATERIAL | METAL |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-39 |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| TERMINAL CIRCLE DIAMETER | 0.200 INCHES NOMINAL |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.260 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.370 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| TEST DATA DOCUMENT | 82577-928923 DRAWING |
Restrictions/Controls & Freight Information | NSN 5961-01-112-0925
| Category | Code | Description |
|---|---|---|
| Hazardous Material Indicator Code | N | There is no data in the HMIS and the NSN is in an FSC not generally suspected of containing hazardous materials |
| Electro-static Discharge Susceptible: | B | ESD sensitivity |
| Category | Code | Description |
|---|---|---|
| No Freight Information | ||



