Product Details | TRANSISTOR

5961-01-202-8517 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Part Alternates: 5961-01-202-8517, 01-202-8517, 5961012028517, 012028517

Electrical and Electronic Equipment Components | Semiconductor Devices and Associated Hardware

Supply Group (FSG) NSN Assign. NIIN
59 01-202-8517

Cross Reference | NSN 5961-01-202-8517

Part Number Cage Code Manufacturer
1-958082-001 36090 LOCKHEED MARTIN LIBRASCOPE CORP
102725 52542 SYSTRON-DONNER CORP MICROWAVE/INSTRUMENT DIV
11119 58900 GIGA-TRONICS INCORPORATED
15-011 24862 N H RESEARCH, INCORPORATED
174-70464-33 04773 GTE COMMUNICATION SYSTEMS CORP
1853-0066 1LQK8 KEYSIGHT TECHNOLOGIES, INC.
1853-0066 28480 HEWLETT-PACKARD COMPANY DBA HEWLETT-PACKARD CO. OR HP
1853-0066 82577 RAYTHEON COMPANY DBA RAYTHEON
225599 89536 FLUKE CORPORATION
2N4250 03508 GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT
2N4250 07263 FAIRCHILD SEMICONDUCTOR CORP
2N4250 28584 DATAPRODUCTS CORP
2N4250 80131 ELECTRONIC INDUSTRIES ASSOCIATION
2N4250 C7191 ADELCO ELEKTRONIK GMBH
2N4250A C7191 ADELCO ELEKTRONIK GMBH
352146 89536 FLUKE CORPORATION
380-0091-000 88113 HBC SOLUTIONS, INC. DBA HARRIS BROADCAST
4818-225599 89536 FLUKE CORPORATION
8210-1135 24655 GENRAD INC
8210-1294 24655 GENRAD INC
8210-1294 62015 IET LABS., INC. DBA IET LABS
962-425-00 30072 EMERSON ELECTRIC CO DORIC SCIENTIFIC DIV
JAN2N4250 81349 MILITARY SPECIFICATIONS PROMULGATED BY MILITARY
PN4250-18 07263 FAIRCHILD SEMICONDUCTOR CORP
RD-516/U 28009 SYPRIS ELECTRONICS, LLC DIV SYPRIS ELECTRONICS, LLC -
RELEASE5285 80131 ELECTRONIC INDUSTRIES ASSOCIATION
S22650 07263 FAIRCHILD SEMICONDUCTOR CORP
S26001 81755 LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN AERONAUTICS
S32263 04713 FREESCALE SEMICONDUCTOR, INC.
S32263 07263 FAIRCHILD SEMICONDUCTOR CORP
ST62122 27014 NATIONAL SEMICONDUCTOR CORPORATION

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Technical Data | NSN 5961-01-202-8517

Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
INTERNAL CONFIGURATION JUNCTION CONTACT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 40.0 MINIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 40.0 MINIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 0.25 MAXIMUM COLLECTOR TO EMITTER SATURATION VOLTAGE
CURRENT RATING PER CHARACTERISTIC 10.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC AND 0.50 MILLIAMPERES MAXIMUM BASE CURRENT, DC
POWER RATING PER CHARACTERISTIC 600.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
TRANSFER RATIO 700.0 NOMINAL STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT 200.0 DEG CELSIUS JUNCTION
INCLOSURE MATERIAL PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION TO-92
MOUNTING METHOD TERMINAL
TERMINAL LENGTH 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY 3 UNINSULATED WIRE LEAD
OVERALL LENGTH 0.210 INCHES MAXIMUM
OVERALL HEIGHT 0.165 INCHES MAXIMUM
OVERALL WIDTH 0.205 INCHES MAXIMUM
SPECIAL FEATURES JUNCTION PATTERN ARRANGEMENT: PNP

Restrictions/Controls & Freight Information | NSN 5961-01-202-8517

Category Code Description
Hazardous Material Indicator CodeNThere is no data in the HMIS and the NSN is in an FSC not generally suspected of containing hazardous materials
Category Code Description
No Freight Information