NSN 5961-01-318-8096 01-318-8096, 013188096
Product Details | TRANSISTOR
5961-01-318-8096 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Part Alternates: 5961-01-318-8096, 01-318-8096, 5961013188096, 013188096
Electrical and Electronic Equipment Components | Semiconductor Devices and Associated Hardware
| Supply Group (FSG) | NSN Assign. | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | 01-318-8096 | 20588 ( TRANSISTOR ) |
Cross Reference | NSN 5961-01-318-8096
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 04EM096-001 | 24587 | RAYTHEON CO ESD LONG ISLAND DIV |
| 148984-1 | 94987 | CUBIC DEFENSE APPLICATIONS, INC. |
| 1855-0215 | 28480 | HEWLETT-PACKARD COMPANY DBA HEWLETT-PACKARD CO. OR HP |
| 2N7105 | 17856 | SILICONIX INCORPORATED DIV SILICONIX |
| 2N7105 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| 330308 | 16067 | CALIFORNIA INSTRUMENTS CORP |
| 4045636P1 | 94117 | BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION INC. |
| 803076-1 | 96214 | RAYTHEON COMPANY DBA RAYTHEON |
| CIC376 | 16067 | CALIFORNIA INSTRUMENTS CORP |
| CW474 | 18324 | PHILIPS SEMICONDUCTORS INC |
| DM1074 | 17856 | SILICONIX INCORPORATED DIV SILICONIX |
| M1015/883B | 21845 | SOLITRON DEVICES, INC. |
| RELEASE 7099 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| SD11EE/883B | 18324 | PHILIPS SEMICONDUCTORS INC |
| SD211/833B | 32293 | INTERSIL INC SUB OF GENERAL ELECTRIC CO |
| SD211DE | 17856 | SILICONIX INCORPORATED DIV SILICONIX |
| SD211DE(SELECTED) | 0ANF0 | TOPAZ SEMICONDUCTOR INC SUB OF HYTEK MICROSYSTEMS INC |
| SD211DE/M | 15818 | TELCOM SEMICONDUCTOR INC |
| SD211EE/883B | 18324 | PHILIPS SEMICONDUCTORS INC |
| SDF9211 | 21845 | SOLITRON DEVICES, INC. |
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Technical Data | NSN 5961-01-318-8096
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | FIELD EFFECT |
| (NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE | N-CHANNEL JUNCTION TYPE |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 30.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 30.0 MAXIMUM DRAIN TO SUBSTRATE VOLTAGE |
| CURRENT RATING PER CHARACTERISTIC | 50.00 MILLIAMPERES MAXIMUM DRAIN CURRENT |
| POWER RATING PER CHARACTERISTIC | 1.2 WATTS MAXIMUM TOTAL POWER DISSIPATION |
| INCLOSURE MATERIAL | METAL |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| TERMINAL CIRCLE DIAMETER | 0.100 INCHES NOMINAL |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.210 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.230 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
Restrictions/Controls & Freight Information | NSN 5961-01-318-8096
| Category | Code | Description |
|---|---|---|
| Hazardous Material Indicator Code | N | There is no data in the HMIS and the NSN is in an FSC not generally suspected of containing hazardous materials |
| Category | Code | Description |
|---|---|---|
| No Freight Information | ||